#IR, #GA150TD120U, #IGBT_Module, #IGBT, GA150TD120U Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, DOUBLE INT-A-PAK-7; GA150TD120U
Manufacturer Part Number: GA150TD120URohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Infineon Technologies AGRisk Rank: 5.68Additional Feature: UL APPROVED, LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, DOUBLE INT-A-PAK-7