#IR, #GA200HS60S, #IGBT_Module, #IGBT, GA200HS60S Insulated Gate Bipolar Transistor, 470A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-11; GA200HS60S
Manufacturer Part Number: GA200HS60SRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-XUFM-X11ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.67Additional Feature: LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 470 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTSJESD-30 Code: R-XUFM-X11Number of Elements: 2Number of Terminals: 11Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 470A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-11