#IR, #GA200HS60S1PBF, #IGBT_Module, #IGBT, GA200HS60S1PBF Insulated Gate Bipolar Transistor, 480A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, INT-A-PAK-7; GA20
Manufacturer Part Number: GA200HS60S1PBFPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: ROHS COMPLIANT, INT-A-PAK-7Pin Count: 7ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 5.84Additional Feature: LOW CONDUCTION LOSS, UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 480 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTSGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 2Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 830 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 480A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, INT-A-PAK-7