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IR GA200SA60UP

  • GA200SA60UP

GA200SA60UP Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4; GA200SA60UP

· Categories: IGBT
· Manufacturer: IR
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 22
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Content last revised on June 28, 2023

Manufacturer Part Number: GA200SA60UPRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 5.11Additional Feature: LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4