Content last revised on October 30, 2024
GA50TS120U Product details
Features
Generation 4 IGBT technology
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Very low conduction and switching losses
HEXFRED™ antiparallel diodes with ultra- soft recovery
Industry standard package
UL approved
Benefits
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS, SMPS, Welding
Lower EMI, requires less snubbing
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:280W
Isolation Voltage VIsol (AC 1 minute) :3400V
Operating junction temperature Tj:-40~+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.0~4.0 N·m
Weight of Module 200g