#IR, #GB25RF120K, #IGBT_Module, #IGBT, GB25RF120K Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24; GB25RF120K
Manufacturer Part Number: GB25RF120KRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: LEAD FREE, ECONO2PIM-24Pin Count: 24ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X24JESD-609 Code: e3Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT APPLICABLEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 198 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: MATTE TIN OVER NICKEL (197)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24