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IR GB30RF60K

  • GB30RF60K

GB30RF60K Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24; GB30RF60K

· Categories: IGBT
· Manufacturer: IR
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 147
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Content last revised on May 30, 2023

Manufacturer Part Number: GB30RF60KRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: FLANGE MOUNT, R-XUFM-X24Pin Count: 24Manufacturer: Vishay IntertechnologiesRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X24Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 129 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 241 nsTurn-on Time-Nom (ton): 165 ns Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24