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IR GB50XF120K

  • GB50XF120K

GB50XF120K Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO26PACK-17; GB50XF120K

· Categories: IGBT
· Manufacturer: IR
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 308
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Content last revised on May 20, 2023

Manufacturer Part Number: GB50XF120KRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: LEAD FREE, ECONO26PACK-17Pin Count: 17ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 5.82Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17JESD-609 Code: e3Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT APPLICABLEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 329 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: MATTE TIN OVER NICKEL (197)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO26PACK-17