Content last revised on April 30, 2023
Manufacturer Part Number: IGB20N60H3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: D2PAKPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 0.6Case Connection: COLLECTORCollector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5.7 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 170 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN