#Infineon Technologies, #IHW30N135R3FKSA1, #IGBT_Module, #IGBT, IHW30N135R3FKSA1 Insulated Gate Bipolar Transistor, 60A I(C), 1350V V(BR)CES, N-Channel,; IHW30N135R3FKSA1
Manufacturer Part Number: IHW30N135R3FKSA1Pbfree Code: YesPart Life Cycle Code: End Of LifeIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: ,ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 6.25Collector Current-Max (IC): 60 ACollector-Emitter Voltage-Max: 1350 VGate-Emitter Thr Voltage-Max: 6.4 VGate-Emitter Voltage-Max: 20 VJESD-609 Code: e3Operating Temperature-Max: 175 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 349 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Time Insulated Gate Bipolar Transistor, 60A I(C), 1350V V(BR)CES, N-Channel,