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Infineon Technologies IKD03N60RF New IGBT Module

#Infineon Technologies, #IKD03N60RF, #IGBT_Module, #IGBT, IKD03N60RF Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3; IKD03N60RF

· Categories: IGBT Module
· Manufacturer: Infineon Technologies
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1685
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IKD03N60RF Specification

Sell IKD03N60RF, #Infineon Technologies #IKD03N60RF New Stock, IKD03N60RF Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3; IKD03N60RF, #IGBT_Module, #IGBT, #IKD03N60RF
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Manufacturer Part Number: IKD03N60RFPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-252Package Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer: Infineon Technologies AGRisk Rank: 5.62Case Connection: COLLECTORCollector Current-Max (IC): 5 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.7 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 53.6 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3

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