#Infineon Technologies, #IKD15N60RF, #IGBT_Module, #IGBT, IKD15N60RF Insulated Gate Bipolar Transistor,; IKD15N60RF
Manufacturer Part Number: IKD15N60RFPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 1.52Case Connection: COLLECTORCollector Current-Max (IC): 15 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.7 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 193 nsTurn-on Time-Nom (ton): 30 nsVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor,