Content last revised on July 5, 2023
Manufacturer Part Number: IPB65R190CFDPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: D2PAKPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4Manufacturer: Infineon Technologies AGRisk Rank: 2.2Avalanche Energy Rating (Eas): 484 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 650 VDrain Current-Max (ID): 17.5 ADrain-source On Resistance-Max: 0.19 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 57.2 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3