Content last revised on June 28, 2023
Manufacturer Part Number: IPD65R600C6Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-252Package Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4Manufacturer: Infineon Technologies AGRisk Rank: 5.21Avalanche Energy Rating (Eas): 142 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 650 VDrain Current-Max (Abs) (ID): 7.3 ADrain-source On Resistance-Max: 0.6 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 63 WPulsed Drain Current-Max (IDM): 18 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3