Content last revised on December 25, 2023
Manufacturer Part Number: IRF6644TR1PBFPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGManufacturer: Infineon Technologies AGRisk Rank: 5.66Additional Feature: LOW CONDUCTION LOSSAvalanche Energy Rating (Eas): 86 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 10 ADrain-source On Resistance-Max: 0.013 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XBCC-N3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: CHIP CARRIERPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 2.8 WPower Dissipation-Max (Abs): 89 WPulsed Drain Current-Max (IDM): 228 ASurface Mount: YESTerminal Form: NO LEADTerminal Position: BOTTOMTransistor Element Material: SILICON Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,