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International Rectifier IRF9910PBF

  • IRF9910PBF

IRF9910PBF Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8; IRF9910PBF

· Categories: IGBT
· Manufacturer: International Rectifier
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 2203
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Content last revised on July 11, 2023

Manufacturer Part Number: IRF9910PBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.47Avalanche Energy Rating (Eas): 26 mJConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (ID): 12 ADrain-source On Resistance-Max: 0.0093 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MS-012AAJESD-30 Code: R-PDSO-G8Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 98 AQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8