#IR, #IRFK4H250, #IGBT_Module, #IGBT, IRFK4H250 Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET; IRFK4H250
Manufacturer Part Number: IRFK4H250Part Life Cycle Code: ObsoleteIhs Manufacturer: THOMSON CONSUMER ELECTRONICSPackage Description: ,Manufacturer: Thomson Consumer ElectronicsRisk Rank: 5.84Drain Current-Max (Abs) (ID): 68 AFET Technology: METAL-OXIDE SEMICONDUCTORNumber of Elements: 4Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 500 WSubcategory: FET General Purpose Power Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET