Content last revised on September 5, 2023
Manufacturer Part Number: IRFR5305PBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Infineon Technologies AGRisk Rank: 6.92Additional Feature: AVALANCHE RATED, HIGH RELIABILITYAvalanche Energy Rating (Eas): 280 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 55 VDrain Current-Max (Abs) (ID): 25 ADrain Current-Max (ID): 31 ADrain-source On Resistance-Max: 0.065 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-252AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °COperating Temperature-Min: -55 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 69 WPulsed Drain Current-Max (IDM): 110 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3