International Rectifier IRFU1018EPBF IGBT Module

Manufacturer Part Number: IRFU1018EPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: IN-LINE, R-PSIP-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.82Avalanche Energy Rating (Eas): 88 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 79 ADrain Current-Max (ID): 56 ADrain-source On Resistance-Max: 0.0084 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-251AAJESD-30 Code: R-PSIP-T3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 110 WPulsed Drain Current-Max (IDM): 315 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3