#International Rectifier, #IRFU3710ZPBF, #IGBT_Module, #IGBT, IRFU3710ZPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: IRFU3710ZPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: IN-LINE, R-PSIP-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 7.87Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEAvalanche Energy Rating (Eas): 150 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 56 ADrain Current-Max (ID): 42 ADrain-source On Resistance-Max: 0.018 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-251AAJESD-30 Code: R-PSIP-T3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 140 WPulsed Drain Current-Max (IDM): 220 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3