#International Rectifier, #IRG4PH20KPBF, #IGBT_Module, #IGBT, IRG4PH20KPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAG
Manufacturer Part Number: IRG4PH20KPBFRohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 7.31Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 11 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEFall Time-Max (tf): 400 nsGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ACJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 24 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3