Sell
IRG7PH35UD1MPBF,
# International Rectifier #IRG7PH35UD1MPBF New Stock, IRG7PH35UD1MPBF Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel; IRG7PH35UD1MPBF, #IGBT_Module, #IGBT, #IRG7PH35UD1MPBF
Email: sales@shunlongwei.com
URL:
https://www.slw-ele.com/irg7ph35ud1mpbf.html
Manufacturer Part Number: IRG7PH35UD1MPBF
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer:
Infineon TECHNOLOGIES AG
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.65
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 1200 V
Fall Time-Max (tf): 105 ns
Gate-Emitter Thr Voltage-Max: 6 V
Gate-Emitter Voltage-Max: 30 V
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 179 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
