Content last revised on May 18, 2023
Manufacturer Part Number: IRG7PH35UPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: LEAD FREE, PLASTIC PACKAGE-3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.43Case Connection: COLLECTORCollector Current-Max (IC): 55 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEFall Time-Max (tf): 105 nsGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 30 VJEDEC-95 Code: TO-247ACJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 250Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 210 WQualification Status: Not QualifiedRise Time-Max (tr): 30 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: MATTE TIN OVER NICKELTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3