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International Rectifier IRG7PH37K10D-EPBF New IGBT Module

#International Rectifier, #IRG7PH37K10D_EPBF, #IGBT_Module, #IGBT, IRG7PH37K10D-EPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel; IRG7PH37K10D-EPBF

· Categories: IGBT Module
· Manufacturer: International Rectifier
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1659
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IRG7PH37K10D-EPBF Specification

Sell IRG7PH37K10D-EPBF, #International Rectifier #IRG7PH37K10D-EPBF New Stock, IRG7PH37K10D-EPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel; IRG7PH37K10D-EPBF, #IGBT_Module, #IGBT, #IRG7PH37K10D_EPBF
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/irg7ph37k10d-epbf.html

Manufacturer Part Number: IRG7PH37K10D-EPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.6Collector Current-Max (IC): 45 ACollector-Emitter Voltage-Max: 1200 VFall Time-Max (tf): 100 nsGate-Emitter Thr Voltage-Max: 7.5 VGate-Emitter Voltage-Max: 30 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 216 WRise Time-Max (tr): 45 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel

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