#International Rectifier, #IRG7PH37K10D_EPBF, #IGBT_Module, #IGBT, IRG7PH37K10D-EPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel; IRG7PH37K10D-EPBF
Manufacturer Part Number: IRG7PH37K10D-EPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.6Collector Current-Max (IC): 45 ACollector-Emitter Voltage-Max: 1200 VFall Time-Max (tf): 100 nsGate-Emitter Thr Voltage-Max: 7.5 VGate-Emitter Voltage-Max: 30 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 216 WRise Time-Max (tr): 45 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel