#International Rectifier, #IRG7PH42UD1PBF, #IGBT_Module, #IGBT, IRG7PH42UD1PBF Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, ROHS COMPLIANT, PLASTIC
Manufacturer Part Number: IRG7PH42UD1PBF
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: ROHS COMPLIANT, PLASTIC PACKAGE-3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.59
Case Connection: COLLECTOR
Collector Current-Max (IC): 78 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf): 43 ns
Gate-Emitter Thr Voltage-Max: 6 V
Gate-Emitter Voltage-Max: 30 V
JEDEC-95 Code: TO-247AC
JESD-30 Code: R-PSFM-T3
JESD-609 Code: e3
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): 250
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 313 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN OVER NICKEL
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3