#International Rectifier, #IRG7PH44K10D_EPBF, #IGBT_Module, #IGBT, IRG7PH44K10D-EPBF Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel; IRG7PH44K10D-EPBF
Manufacturer Part Number: IRG7PH44K10D-EPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.82Collector Current-Max (IC): 70 ACollector-Emitter Voltage-Max: 1200 VFall Time-Max (tf): 115 nsGate-Emitter Thr Voltage-Max: 7.5 VGate-Emitter Voltage-Max: 30 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 320 WRise Time-Max (tr): 70 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel