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International Rectifier IRG7PH50K10DPBF IGBT Module

#International Rectifier, #IRG7PH50K10DPBF, #IGBT_Module, #IGBT, IRG7PH50K10DPBF Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel; IRG7PH50K10DPBF

· Categories: IGBT Module
· Manufacturer: International Rectifier
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 757
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IRG7PH50K10DPBF Specification

Sell IRG7PH50K10DPBF, #International Rectifier #IRG7PH50K10DPBF Stock, IRG7PH50K10DPBF Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel; IRG7PH50K10DPBF, #IGBT_Module, #IGBT, #IRG7PH50K10DPBF
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Manufacturer Part Number: IRG7PH50K10DPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.81Collector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 1200 VFall Time-Max (tf): 110 nsGate-Emitter Thr Voltage-Max: 7.5 VGate-Emitter Voltage-Max: 30 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WRise Time-Max (tr): 80 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel

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