Content last revised on May 21, 2023
Manufacturer Part Number: IRGIB7B60KDPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: TO-220AB, FULL PACK-3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.57Case Connection: ISOLATEDCollector Current-Max (IC): 12 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 56 nsGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 39 WQualification Status: Not QualifiedRise Time-Max (tr): 26 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, FULL PACK-3