#International Rectifier, #IRGP4069D_EPBF, #IGBT_Module, #IGBT, IRGP4069D-EPBF Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE, PLASTIC PACKA
Manufacturer Part Number: IRGP4069D-EPBFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 0.8Case Connection: COLLECTORCollector Current-Max (IC): 76 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 54 nsGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 250Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 268 WQualification Status: Not QualifiedRise Time-Max (tr): 42 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: MATTE TIN OVER NICKELTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE, PLASTIC PACKAGE-3