Content last revised on June 27, 2023
Manufacturer Part Number: IRGR3B60KD2TRPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2Manufacturer: Infineon Technologies AGRisk Rank: 5.83Collector Current-Max (IC): 7.8 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 105 nsGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-252AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 52 WQualification Status: Not QualifiedRise Time-Max (tr): 22 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3