#International Rectifier, #IRGSL14C40LPBF, #IGBT_Module, #IGBT, IRGSL14C40LPBF Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-262AA, LEAD FREE, PLASTIC PACKA
Manufacturer Part Number: IRGSL14C40LPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: IN-LINE, R-PSIP-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.78Additional Feature: LOW SATURATION VOLTAGECollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 370 VConfiguration: SINGLE WITH BUILT-IN DIODE AND RESISTORGate-Emitter Thr Voltage-Max: 2.2 VGate-Emitter Voltage-Max: 12 VJEDEC-95 Code: TO-262AAJESD-30 Code: R-PSIP-T3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 125 WQualification Status: Not QualifiedRise Time-Max (tr): 4000 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3