Content last revised on December 11, 2023
Manufacturer Part Number: IRGSL6B60KDPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: LEAD FREE, PLASTIC PACKAGE-3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.64Case Connection: COLLECTORCollector Current-Max (IC): 13 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 27 nsGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-262JESD-30 Code: R-PSIP-T3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 90 WQualification Status: Not QualifiedRise Time-Max (tr): 26 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3