#IXYS, #IXBX75N170A, #IGBT_Module, #IGBT, IXBX75N170A Insulated Gate Bipolar Transistor, 110A I(C), 1700V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXBX75N170A
Manufacturer Part Number: IXBX75N170APbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.66Case Connection: COLLECTORCollector Current-Max (IC): 110 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 110 nsGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1040 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 110A I(C), 1700V V(BR)CES, N-Channel, PLUS247, 3 PIN