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IXYS IXBX75N170A

  • IXBX75N170A

IXBX75N170A Insulated Gate Bipolar Transistor, 110A I(C), 1700V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXBX75N170A

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1168
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Content last revised on May 19, 2023

Manufacturer Part Number: IXBX75N170APbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.66Case Connection: COLLECTORCollector Current-Max (IC): 110 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 110 nsGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1040 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 110A I(C), 1700V V(BR)CES, N-Channel, PLUS247, 3 PIN

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