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IXYS IXDA20N120AS

  • IXDA20N120AS

IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3; IXDA20N120AS

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 766
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Content last revised on June 26, 2023

Manufacturer Part Number: IXDA20N120ASPbfree Code: YesPart Life Cycle Code: End Of LifeIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.69Additional Feature: HIGH SPEEDCase Connection: COLLECTORCollector Current-Max (IC): 34 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 200 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

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