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IXYS IXFK34N80

  • IXFK34N80
  • IXFK34N80 Power Field-Effect Transistor, 34A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN; IXFK34N80

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1811
    MOQ: 1 PC
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    Content last revised on June 23, 2023

    Manufacturer Part Number: IXFK34N80Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-264Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 8.6Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 3000 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 800 VDrain Current-Max (Abs) (ID): 34 ADrain Current-Max (ID): 34 ADrain-source On Resistance-Max: 0.24 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-264JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 560 WPulsed Drain Current-Max (IDM): 136 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 34A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN

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