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IXYS IXGA12N100 IGBT Module

#IXYS, #IXGA12N100, #IGBT_Module, #IGBT, IXGA12N100 Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-263AB, D2PAK-3; IXGA12N100

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2114
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IXGA12N100 Specification

Sell IXGA12N100, #IXYS #IXGA12N100 Stock, IXGA12N100 Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-263AB, D2PAK-3; IXGA12N100, #IGBT_Module, #IGBT, #IXGA12N100
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixga12n100.html

Manufacturer Part Number: IXGA12N100Pbfree Code: YesPart Life Cycle Code: End Of LifeIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: D2PAK-3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.6Additional Feature: HIGH SPEEDCase Connection: COLLECTORCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 1000 VConfiguration: SINGLEFall Time-Max (tf): 700 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

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