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IXYS IXGH4N250C

  • IXGH4N250C
  • IXGH4N250C Insulated Gate Bipolar Transistor, 13A I(C), 2500V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3; IXGH4N250C

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 579
    MOQ: 1 PC
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    Content last revised on September 17, 2023

    Manufacturer Part Number: IXGH4N250CRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.72Case Connection: COLLECTORCollector Current-Max (IC): 13 ACollector-Emitter Voltage-Max: 2500 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 150 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 471 ns Insulated Gate Bipolar Transistor, 13A I(C), 2500V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3