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IXYS IXGH4N250C New IGBT Module

#IXYS, #IXGH4N250C, #IGBT_Module, #IGBT, IXGH4N250C Insulated Gate Bipolar Transistor, 13A I(C), 2500V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3; IXGH4N250C

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 579
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IXGH4N250C Specification

Sell IXGH4N250C, #IXYS #IXGH4N250C New Stock, IXGH4N250C Insulated Gate Bipolar Transistor, 13A I(C), 2500V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3; IXGH4N250C, #IGBT_Module, #IGBT, #IXGH4N250C
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixgh4n250c.html

Manufacturer Part Number: IXGH4N250CRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.72Case Connection: COLLECTORCollector Current-Max (IC): 13 ACollector-Emitter Voltage-Max: 2500 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 150 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 471 ns Insulated Gate Bipolar Transistor, 13A I(C), 2500V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3

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