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IXYS IXGP30N60C3C1 IGBT Module

#IXYS, #IXGP30N60C3C1, #IGBT_Module, #IGBT, IXGP30N60C3C1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC, TO-220, 3 PIN; I

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1724
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IXGP30N60C3C1 Specification

Sell IXGP30N60C3C1, #IXYS #IXGP30N60C3C1 Stock, IXGP30N60C3C1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC, TO-220, 3 PIN; IXGP30N60C3C1, #IGBT_Module, #IGBT, #IXGP30N60C3C1
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixgp30n60c3c1.html

Manufacturer Part Number: IXGP30N60C3C1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.15Case Connection: COLLECTORCollector Current-Max (IC): 60 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 220 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC, TO-220, 3 PIN

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