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IXYS IXGT2N250

  • IXGT2N250

IXGT2N250 Insulated Gate Bipolar Transistor, 5.5A I(C), 2500V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN; IXGT2N250

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1947
90-Day Warranty
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Content last revised on June 27, 2023

Manufacturer Part Number: IXGT2N250Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-268AAPackage Description: TO-268, 3 PINPin Count: 4Manufacturer: IXYS CorporationRisk Rank: 2.25Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 5.5 ACollector-Emitter Voltage-Max: 2500 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 32 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 5.5A I(C), 2500V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN

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