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IXYS IXST35N120B

  • IXST35N120B
  • IXST35N120B Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3; IXST35N120B

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 620
    MOQ: 1 PC
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    Content last revised on December 16, 2023

    Manufacturer Part Number: IXST35N120BPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-268AAPackage Description: D3PAK-3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.84Case Connection: COLLECTORCollector Current-Max (IC): 70 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3