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IXYS IXSX50N60AU1

  • IXSX50N60AU1

IXSX50N60AU1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXSX50N60AU1

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1031
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Content last revised on May 21, 2023

Manufacturer Part Number: IXSX50N60AU1Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.84Case Connection: COLLECTORCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 600 nsGate-Emitter Thr Voltage-Max: 8 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 340 nsTurn-on Time-Nom (ton): 70 ns Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN

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