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IXYS IXTL2X200N085T

  • IXTL2X200N085T

IXTL2X200N085T Power Field-Effect Transistor, 112A I(D), 85V, 0.006ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I5PAC-5; IXTL2X200N085T

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1633
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Content last revised on May 21, 2023

Manufacturer Part Number: IXTL2X200N085TPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: ISOPLUS, I5PAC-5Pin Count: 5ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.82Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 1000 mJCase Connection: ISOLATEDConfiguration: COMPLEXDS Breakdown Voltage-Min: 85 VDrain Current-Max (ID): 112 ADrain-source On Resistance-Max: 0.006 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSIP-T5Number of Elements: 2Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 540 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 112A I(D), 85V, 0.006ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I5PAC-5

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