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IXYS IXTY44N10T

  • IXTY44N10T
  • IXTY44N10T Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 2 PIN; IXTY44N10T

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1320
    MOQ: 1 PC
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    Content last revised on November 16, 2023

    Manufacturer Part Number: IXTY44N10TPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-252AAPackage Description: TO-252AA, 2 PINPin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.27Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 250 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 44 ADrain Current-Max (ID): 44 ADrain-source On Resistance-Max: 0.03 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-252AAJESD-30 Code: R-PSSO-G2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 130 WPulsed Drain Current-Max (IDM): 140 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 2 PIN