Datasheets:IXX(K,X)110N65B4H1 PreliminaryProduct Photos:Plus247Standard Package:30Category:Discrete Semiconductor ProductsFamily:IGBTs - SingleSeries:GenX4
IXYS IXXX110N65B4H1 New Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, N-Channel,, IXXX110N65B4H1 pictures, IXXX110N65B4H1 price, IXXX110N65B4H1 supplier
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Manufacturer Part Number: IXXX110N65B4H1
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Manufacturer: IXYS Corporation
Risk Rank: 2.26
Collector Current-Max (IC): 240 A
Collector-Emitter Voltage-Max: 650 V
Gate-Emitter Thr Voltage-Max: 6.5 V
Gate-Emitter Voltage-Max: 20 V
JESD-609 Code: e3
Operating Temperature-Max: 175 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 880 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, N-Channel,
Shunlongwei Inspected every IXXX110N65B4H1 before Ship, All IXXX110N65B4H1 with 6 months warranty.
