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IXYS IXXX200N65B4

  • IXXX200N65B4

IXXX200N65B4 Insulated Gate Bipolar Transistor, 370A I(C), 650V V(BR)CES, N-Channel,; IXXX200N65B4

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1849
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Content last revised on November 15, 2023

Manufacturer Part Number: IXXX200N65B4Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.25Collector Current-Max (IC): 370 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJESD-609 Code: e3Operating Temperature-Max: 175 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1150 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) Insulated Gate Bipolar Transistor, 370A I(C), 650V V(BR)CES, N-Channel,

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