#POWEREX, #KS0312A0, #IGBT_Module, #IGBT, KS0312A0 Power Bipolar Transistor, 5A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin; KS0312A0
Manufacturer Part Number: KS0312A0Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-PSFM-T3Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 5 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 10Fall Time-Max (tf): 800 nsJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 100 WQualification Status: Not QualifiedRise Time-Max (tr): 1000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: SWITCHINGTransistor Element Material: SILICONVCEsat-Max: 1 V Power Bipolar Transistor, 5A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin