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M/A-Com Technology Solutions MAGX-000912-125L00

  • MAGX-000912-125L00
  • MAGX-000912-125L00 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2; MAGX-000912-125L00

    · Categories: IGBT
    · Manufacturer: M/A-Com Technology Solutions
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1694
    MOQ: 1 PC
    Express Shipping
    90-Day Warranty
    1-2 Days Lead Time
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    Whatsapp: 0086 189 2465 1869

    Content last revised on May 19, 2023

    Manufacturer Part Number: MAGX-000912-125L00Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: M/A-COM TECHNOLOGY SOLUTIONS INCPackage Description: FLANGE MOUNT, R-CDFM-F2Pin Count: 2ECCN Code: EAR99Manufacturer: MACOMRisk Rank: 5.83Case Connection: SOURCEConfiguration: SINGLEDrain Current-Max (ID): 7.1 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: L BANDJESD-30 Code: R-CDFM-F2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2