Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

M/A-Com Technology Solutions MAGX-000912-250L00

  • MAGX-000912-250L00

MAGX-000912-250L00 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2; MAGX-000912-250L00

· Categories: IGBT
· Manufacturer: M/A-Com Technology Solutions
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 2047
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on May 25, 2023

Manufacturer Part Number: MAGX-000912-250L00Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: M/A-COM TECHNOLOGY SOLUTIONS INCPackage Description: FLANGE MOUNT, R-CDFM-F2Pin Count: 2ECCN Code: EAR99Manufacturer: MACOMRisk Rank: 8.62Case Connection: SOURCEConfiguration: SINGLEDrain Current-Max (ID): 14.2 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: L BANDJESD-30 Code: R-CDFM-F2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2