#M/A-Com Technology Solutions, #MAGX_001214_250L00, #IGBT_Module, #IGBT, MAGX-001214-250L00 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobili
Manufacturer Part Number: MAGX-001214-250L00Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: M/A-COM TECHNOLOGY SOLUTIONS INCPackage Description: FLANGE MOUNT, R-CDFM-F2Pin Count: 2ECCN Code: EAR99Manufacturer: MACOMRisk Rank: 5.84Case Connection: SOURCEConfiguration: SINGLEDrain Current-Max (ID): 8.8 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: L BANDJESD-30 Code: R-CDFM-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2