#GeneSiC Semiconductor, #MBR60080CT, #IGBT_Module, #IGBT, MBR60080CT 80V 600A Silicon Schottky Rectifier in Twin Tower Package; MBR60080CT
Manufacturer Part Number: MBR60080CTRPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: GENESIC SEMICONDUCTOR INCPackage Description: R-PUFM-X2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: GeneSic Semiconductor IncRisk Rank: 5.54Application: POWERCase Connection: ANODEConfiguration: COMMON ANODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.84 VJESD-30 Code: R-PUFM-X2Non-rep Pk Forward Current-Max: 4000 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 300 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTRep Pk Reverse Voltage-Max: 80 VReverse Current-Max: 1000 µASurface Mount: NOTechnology: SCHOTTKYTerminal Form: UNSPECIFIEDTerminal Position: UPPER 80V 600A Silicon Schottky Rectifier in Twin Tower Package